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Molecular bandgap engineering of bottom-up synthesized graphene nanoribbon heterojunctions

机译:自底向上合成石墨烯纳米带异质结的分子带隙工程

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摘要

Bandgap engineering is used to create semiconductor heterostructure devices that perform processes such as resonant tunnelling and solar energy conversion. However, the performance of such devices degrades as their size is reduced. Graphene-based molecular electronics has emerged as a candidate to enable high performance down to the single-molecule scale. Graphene nanoribbons, for example, can have widths of less than 2nm and bandgaps that are tunable via their width and symmetry. It has been predicted that bandgap engineering within a single graphene nanoribbon may be achieved by varying the width of covalently bonded segments within the nanoribbon. Here, we demonstrate the bottom-up synthesis of such width-modulated armchair graphene nanoribbon heterostructures, obtained by fusing segments made from two different molecular building blocks. We study these heterojunctions at subnanometre length scales with scanning tunnelling microscopy and spectroscopy, and identify their spatially modulated electronic structure, demonstrating molecular-scale bandgap engineering, including type I heterojunction behaviour. First-principles calculations support these findings and provide insight into the microscopic electronic structure of bandgap-engineered graphene nanoribbon heterojunctions.
机译:带隙工程用于创建半导体异质结构器件,该器件执行诸如谐振隧穿和太阳能转换之类的过程。但是,这种设备的性能随着其尺寸的减小而降低。基于石墨烯的分子电子学已成为候选技术,可实现低至单分子级的高性能。例如,石墨烯纳米带的宽度可以小于2nm,并且带隙可以通过其宽度和对称性进行调整。已经预测,可以通过改变纳米带内共价键合的链段的宽度来实现单个石墨烯纳米带内的带隙工程。在这里,我们展示了这种宽度调节的扶手椅石墨烯纳米带异质结构的自下而上的合成,该结构是通过融合由两种不同的分子构件制成的链段而获得的。我们用扫描隧道显微镜和光谱学研究了亚纳米级长度的这些异质结,并确定了它们的空间调制电子结构,证明了分子尺度的带隙工程,包括I型异质结行为。第一性原理的计算支持了这些发现,并为带隙工程石墨烯纳米带异质结的微观电子结构提供了见识。

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